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DS2016
2k x 8 3V/5V Operation
Static RAM
www.maxim-ic.com
FEATURES
§ Low-power CMOS design
§ Standby current
- 50nA max at t A = +25°C V CC = 3.0V
- 100nA max at t A = +25°C V CC = 5.5V
- 1μA max at t A = +60°C V CC = 5.5V
§ Full operation for V CC = 5.5V to 2.7V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
- DS2016-100 100ns
§ Reduced-speed 3V access time
- DS2016-100 250ns
§ Operating temperature range of -40°C to
+85°C
§ Full static operation
§ TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7V
§ Available in 24-pin DIP and 24-pin SO
packages
§ Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
A7 1 24 V CC
A6 2 23 A8
A5 3 22 A9
A4 4 21 WE
A3 5 20 OE
A2 6 19 A10
A1 7 18 CE
A0 8 17 DQ7
DQ0 9 16 DQ6
DQ1 10 15 DQ5
DQ2 11 14 DQ4
GND 12 13 DQ3
DS2016 24-Pin DIP (600mil)
DS2016R 24-Pin SO (300mil)
PIN DESCRIPTION
A0 to A10 - Address Inputs
DQ0 to DQ7 - Data Input/Output
CE - Chip Enable Input
W E - Write Enable Input
OE
- Output Enable Input
V CC - Power Supply Input 2.7V - 5.5V
GND - Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7V and 5.5V. The chip enable input ( CE ) is used for device
selection and can be used in order to achieve the minimum standby current mode, which facilitates both
battery operated and battery backup applications. The device provides access times as fast as 100ns when
operated from a 5V power supply input and also provides relatively good performance of 250ns access
while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input
voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery
operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM
and is pin-compatible with ROM and EPROM of similar density.
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